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SUD50P08-26
Vishay Siliconix
P-Channel 80-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
- 80 0.026 at V GS = - 10 V
I D (A) a
- 50
Q g (Typ)
102 nC
FEATURES
? TrenchFET ? Power MOSFET
RoHS
COMPLIANT
TO-252
Drain Connected to Tab
G
S
G
D
S
Top View
Ordering Information: SUD50P08-26-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 80
± 20
- 50 a
Unit
V
Continuous Drain Current (T J = 175 °C)
T C = 70 °C
T A = 25 °C
I D
- 43.6 a
- 12.9 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 10.8 b, c
- 60
- 50 a
- 6.9 b, c
- 45
101
A
mJ
T C = 25 °C
136
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
95
8.3 b, c
W
T A = 70 °C
5.8 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case (Drain)
t ≤ 10 sec
Steady State
R thJA
R thJC
15
0.85
18
1.1
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73442
S-71661-Rev. B, 06-Aug-07
www.vishay.com
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